Site-Controlled Growth of Monolithic InGaAs/InP Quantum Well Nanopillar Lasers on Silicon

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Nanopillar quantum well lasers directly grown on silicon and emitting at silicon-transparent wavelengths

FANGLU LU, INDRASEN BHATTACHARYA, HAO SUN, THAI-TRUONG D. TRAN, KAR WEI NG, GILLIARD N. MALHEIROS-SILVEIRA, AND CONNIE CHANG-HASNAIN* Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, California 94720, USA Applied Science and Technology Group, University of California at Berkeley, Berkeley, California 94720, USA Department of Electronic ...

متن کامل

Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well lasers

Generation of short optical pulses with semiconductor laser diodes is important for high bit rate time-division multiplexed communication systems, ultrafast data processing, and picosecond optoelectronic applications. Because the pulse shaping mechanisms are determined by the saturation and recovery time of the gain and absorber sections in mode-locked lasers,’ it is possible to generate short ...

متن کامل

Hybrid III-V Silicon Quantum Dot and Quantum Well Lasers

The silicon photonics field is advancing rapidly, with many new devices demonstrated recently [1]. Demonstrations have shown significantly improved performance that is now approaching that of devices on native InP substrates. In addition to the many passive devices, including AWGs, isolators, and circulators, active devices including lasers, modulators, amplifiers and photodetectors (Fig. 1) ar...

متن کامل

Nanopillar lasers directly grown on silicon with heterostructure surface passivation.

Single-crystalline wurtzite InGaAs/InGaP nanopillars directly grown on a lattice-mismatched silicon substrate are demonstrated. The nanopillar growth is in a core-shell manner and gives a sharp, defect-free heterostructure interface. The InGaP shell provides excellent surface passivation effect for InGaAs nanopillars, as attested by 50-times stronger photoluminescence intensities and 5-times gr...

متن کامل

Monolithic Passively Mode-Locked Lasers using Quantum Dot or Quantum Well Materials Grown on GaAs Substrates

In this work, the optical characteristics of monolithic passively mode-locked lasers (MLLs) fabricated from 1.24-μm InAs dots-in-a-Well (DWELL), 1.25-μm InGaAs single quantum well (SQW), and 1.55-μm GaInNAsSb SQW structures grown using elemental source molecular beam epitaxy (MBE) are reported. 5 GHz optical pulses with subpicosecond RMS jitter, high pulse peak power (1W) and narrow pulse width...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Nano Letters

سال: 2017

ISSN: 1530-6984,1530-6992

DOI: 10.1021/acs.nanolett.7b00607